RF plasma reactor with hybrid conductor and multi-radius dome ceiling

摘要

An inductively coupled RF plasma reactor for processing semiconductor wafer includes a reactor chamber having a side wall (10) and a semiconductor ceiling (12), a wafer pedestal (14) for supporting the wafer (16) in the chamber, an RF power source (28), apparatus (22, 24) for introducing a processing gas into the reactor chamber, and a coil inductor (42) adjacent the reactor chamber connected to the RF power source, the coil inductor including (a) a side section (44) facing a portion of the side wall and including a bottom winding (44b) and a top winding (42a), the top winding being at a height corresponding at least approximately to a top height of the ceiling, and (b) a top section (46) extending radially inwardly from the top winding of the side section so as to overlie at least a substantial portion of the ceiling. Another RF power source (28d, 30d) may be applied to the semiconductor ceiling (12) so that the ceiling functions as a semiconductor window electrode.