Maske für Photolithographie

摘要

A mask for photolithography having a transparent substrate (1) which allows light having a predetermined wavelength to pass therethrough; an opaque pattern (4) provided on said substrate for inhibiting the light from passing therethrough; and a stepped portion (6) provided adjacent to said opaque pattern on said substrate and having an inclined area, said stepped portion being transparent for allowing the light to pass therethrough, which can be used in a photolithographic system in fabrication of semiconductor devices and the like.