发明名称 |
METAL GATE DOUBLE DIFFUSION MOSFET WITH IMPROVED SWITCHING SPEED AND REDUCED GATE TUNNEL LEAKAGE |
摘要 |
A double-diffused metal-oxide-semiconductor ("DMOS") field-effect transistor (10) with a metal gate (26). A sacrificial gate layer is patterned to provide a self-aligned source mask. The source regions (20) are thus aligned to the gate (26), and the source diffusion provides a slight overlap (28) for good turn-on characteristics and low leakage. The sacrificial gate layer is capable of withstanding the diffusion temperatures of the DMOS process and is selectively etchable. After the high-temperature processing is completed, the sacrificial gate layer is stripped and a metal gate layer is formed over the substrate, filling the volume left by the stripped sacrificial gate material. In one embodiment, a chemical-mechanical polishing technique is used to planarize the metal gate layer.
|
申请公布号 |
WO0039858(A3) |
申请公布日期 |
2000.12.21 |
申请号 |
WO1999US29423 |
申请日期 |
1999.12.10 |
申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION;CHAU, DUC, Q.;MO, BRIAN, S. |
发明人 |
CHAU, DUC, Q.;MO, BRIAN, S. |
分类号 |
H01L21/336;H01L29/49;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|