发明名称 |
SEMICONDUCTOR DEVICE WITH COMPENSATED THRESHOLD VOLTAGE AND METHOD FOR MAKING SAME |
摘要 |
The invention concerns a semiconductor device comprising in the channel region (6) first voids (7, 8) adjacent to the junctions (4, 5) which have a predetermined length Lp and a dopant concentration Np of a first conductivity type corresponding to the conductivity type of the substrate (1) dopant locally increasing the net substrate concentration and second voids (9, 10) superposed on the first voids having a length Ln and a dopant concentration Nn of a second conductivity type opposed to the first conductivity type satisfying the relationships Ln > Lp and Nn < Np and locally decreasing the net substrate concentration but without modifying the type of conductivity. The invention is applicable to a MOS transistor. |
申请公布号 |
WO0077856(A1) |
申请公布日期 |
2000.12.21 |
申请号 |
WO2000FR01537 |
申请日期 |
2000.06.05 |
申请人 |
FRANCE TELECOM;SKOTNICKI, THOMAS;GWOZIECKI, ROMAIN |
发明人 |
SKOTNICKI, THOMAS;GWOZIECKI, ROMAIN |
分类号 |
H01L21/225;H01L21/265;H01L21/336;H01L29/10 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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