发明名称 High voltage detector to control a power supply voltage pump for a 2.5 volt semiconductor process device
摘要 A high voltage detector circuit (FIG. 2) maintains a voltage (V2) on a reference line driven by a charge pump by turning the charge pump on with a signal (PUMPON) when the reference line voltage (V2) drops below a reference voltage (V1) plus a CMOS transistor threshold voltage. The high voltage detector is further configured to use transistors which have a maximum gate to drain, or gate to source voltage which exceeds the pin supply voltage to the chip. The high voltage detector includes comparators made up of a series of current mirrors driven by weak current sources enabling the circuit to use a minimum amount of power.
申请公布号 US6163175(A) 申请公布日期 2000.12.19
申请号 US19990276990 申请日期 1999.03.26
申请人 VANTIS CORPORATION 发明人 SHARPE-GEISLER, BRADLEY A.
分类号 H02M3/07;H03K5/24;(IPC1-7):H03K5/153 主分类号 H02M3/07
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