发明名称 |
High voltage detector to control a power supply voltage pump for a 2.5 volt semiconductor process device |
摘要 |
A high voltage detector circuit (FIG. 2) maintains a voltage (V2) on a reference line driven by a charge pump by turning the charge pump on with a signal (PUMPON) when the reference line voltage (V2) drops below a reference voltage (V1) plus a CMOS transistor threshold voltage. The high voltage detector is further configured to use transistors which have a maximum gate to drain, or gate to source voltage which exceeds the pin supply voltage to the chip. The high voltage detector includes comparators made up of a series of current mirrors driven by weak current sources enabling the circuit to use a minimum amount of power.
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申请公布号 |
US6163175(A) |
申请公布日期 |
2000.12.19 |
申请号 |
US19990276990 |
申请日期 |
1999.03.26 |
申请人 |
VANTIS CORPORATION |
发明人 |
SHARPE-GEISLER, BRADLEY A. |
分类号 |
H02M3/07;H03K5/24;(IPC1-7):H03K5/153 |
主分类号 |
H02M3/07 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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