| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of manufacturing a TFT which is enhanced in transistor characteristics, even if a polycrystalline semiconductor film obtained by making an amorphous semiconductor undergo laser annealing process is used as an active layer, a method of manufacturing an active matrix substrate, and an electro-optic device provided with an active matrix substrate formed by this method. SOLUTION: In a method of manufacturing an active matrix substrate used for an electro-optic device such as a liquid crystal panel, when an amorphous semiconductor film 100 formed on a substrate 30 is turned polycrystalline by laser annealing and formed into a TFT, an oxide film present on the surface of the semiconductor film 100 at the time when laser annealing is carried out is set to 1/50 or smaller than the thickness of a gate insulating film, and in a laser annealing process, every point on the surface of the semiconductor film 100 is irradiated 20 to 200 times with a laser beam.</p> |
