发明名称 PATTERN FORMING METHOD, PRODUCTION OF SEMICONDUCTOR DEVICE AND RADIATION SENSITIVE COMPOSITION
摘要 PROBLEM TO BE SOLVED: To provide a chemical structure having transparency in the far UV region including 193 nm wavelength of ArF excimer laser and also having high dry etching resistance, to permit development with an aqueous alkali devel oping solution without swelling a fine pattern and to enhance resolution by incorporating a compound containing at least a δ-hydroxycarboxylic acid struc ture into a radiation sensitive composition. SOLUTION: A coating film comprising a radiation sensitive composition is formed on a substrate and irradiated with active radiation to form a latent image in the coating film and the latent image is developed with an aqueous alkali developing solution to form the objective pattern. The radiation sensitive composition contains at least a compound containing at least δ- hydroxycarboxylic acid structure represented by the formula. The compound has three ring structures, and in the part irradiated with the active radiation a 6-membered ring is further formed by the lactonization of the δ- hydroxycarboxylic acid structure and high dry etching resistance is ensured.
申请公布号 JP2000352821(A) 申请公布日期 2000.12.19
申请号 JP19990164807 申请日期 1999.06.11
申请人 HITACHI LTD 发明人 YOKOYAMA YOSHIYUKI;HATTORI KOJI;OIIZUMI HIROAKI;TSUCHIYA HIROKO;SHIRAISHI HIROSHI
分类号 H01L21/027;G03F7/038 主分类号 H01L21/027
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