发明名称 |
Porous silicon dioxide insulator |
摘要 |
A porous silicon dioxide insulator having a low relative dielectric constant of about 2.0 or less is formed from a silicon carbide base layer. Initially, at least one layer of silicon carbide is deposited on a semiconductor substrate. The silicon carbide layer is then etched to form a porous silicon carbide layer, which is oxidized to produce the final porous silicon dioxide layer.
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申请公布号 |
US6163066(A) |
申请公布日期 |
2000.12.19 |
申请号 |
US19980139151 |
申请日期 |
1998.08.24 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
FORBES, LEONARD;AHN, KIE Y. |
分类号 |
H01L21/314;H01L21/316;H01L21/768;H01L23/31;(IPC1-7):H01L27/108 |
主分类号 |
H01L21/314 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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