发明名称 X-RAY MASK AND MANUFACTURE OF THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To provide the structure of an X-ray mask, together with its manufacturing method where no positional distortions of a pattern occur, even if a region with dense micro X-ray absorber patterns is formed. SOLUTION: Related to an X-ray mask having a structure, where an absorber pattern 11 of such material as absorbs X-ray is placed on a mask substrate through which X-ray is transmitted, the absorber pattern 11 comprises at least a Ta, having a structure where at least one layer among Ru, Cr, TiN, and TaN is formed as its base material layer 15. The Ta of the absorber pattern 11 comprises a Ta alloy, whose main component is Ta of anαstructure. Furthermore, when manufacturing an X-ray mask, at least the Ta of the absorber pattern 11 is formed by a sputtering method, by a plasma of electron cyclotron resonance.</p>
申请公布号 JP2000353658(A) 申请公布日期 2000.12.19
申请号 JP19990166364 申请日期 1999.06.14
申请人 NIPPON TELEGR & TELEPH CORP <NTT>;NTT ADVANCED TECHNOLOGY CORP 发明人 ODA MASATOSHI;SHIMADA MASARU;TSUCHIZAWA YASUSHI;UCHIYAMA SHINGO;HAGA TSUNEYUKI;YOSHIHARA HIDEO
分类号 H01L21/027;G03F1/22;G21K5/02;(IPC1-7):H01L21/027;G03F1/16 主分类号 H01L21/027
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