摘要 |
<p>PROBLEM TO BE SOLVED: To provide the structure of an X-ray mask, together with its manufacturing method where no positional distortions of a pattern occur, even if a region with dense micro X-ray absorber patterns is formed. SOLUTION: Related to an X-ray mask having a structure, where an absorber pattern 11 of such material as absorbs X-ray is placed on a mask substrate through which X-ray is transmitted, the absorber pattern 11 comprises at least a Ta, having a structure where at least one layer among Ru, Cr, TiN, and TaN is formed as its base material layer 15. The Ta of the absorber pattern 11 comprises a Ta alloy, whose main component is Ta of anαstructure. Furthermore, when manufacturing an X-ray mask, at least the Ta of the absorber pattern 11 is formed by a sputtering method, by a plasma of electron cyclotron resonance.</p> |