| 摘要 |
<p>PROBLEM TO BE SOLVED: To enable highly precise manufacture at a low cost by reducing the number of processes and acquire high performance by forming a second transparent conductive layer whose film thickness is larger than that of a first transparent conductive layer, and providing an isolation groove from the second transparent conductive layer surface to a thin film photoelectric conversion unit for each cell. SOLUTION: A rear electrode 4 of a substrate 1 is a metallic thin film or a combination of a metallic thin film and a transparent conductive oxide film. A first conductivity type semiconductor layer, a photoelectric conversion layer and a second conductivity type semiconductor layer are formed one by one in the rear electrode 4. A transparent conductive oxide film 6a consisting of a material selected from ITO, SnO2, and ZnO is formed in a photoelectric conversion unit 5, and its desirable film thickness is 60 to 100 nm. The front electrode 6 and an upper part (p-layer) of the photoelectric conversion unit 5 are subjected to laser scribe and an isolation groove 8 is formed. Consequently, the front electrode 6 including an upper part of the photoelectric conversion unit 5 is isolated for each cell. As a result, the rear electrode 4 and, the front electrode 6 are electrically connected and an integrated photoelectric conversion device can be acquired.</p> |
