| 摘要 |
PROBLEM TO BE SOLVED: To increase the electric resistivity of a dense silicon carbide body having high purity and a high relative density. SOLUTION: This silicon carbide body comprising silicon carbide polycrystal has >=99.9999 wt.% purity of the silicon carbide, >=99% relative density and >=70.12 wt.% percentage of silicon. Preferably, the silicon carbide body has >=100,000 Ω.cm electric resistivity at room temperature, and <=5 μm average particle diameter of silicon carbide crystals, and is formed into a film by a chemical vapor growth method. |
