| 摘要 |
The present invention introduces an SRAM cell which enhances immunity to soft errors and a manufacturing method thereof. A method of manufacturing an SRAM cell having access devices, pull-up devices and pull-down devices and forming a cell node junction in common junction regions of the pull-down devices and the access devices, the manufacturing method including the steps of: providing a semiconductor substrate of which active regions are difined and gate insulating layers and gates are formed on thereof; forming N- junction regions in the substrates of both sides of the gates for the pull-down devices region and the access devices region, wherein the N- junction regions formed in the cell node are separated therein and are adjacent to the gates thereof; forming the insulating layer spacers on both side-walls of the gates; and forming N+ junction regions in the substrate of both side of the spacers for the pull-down devices region and the access devices region.
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