发明名称 |
Method and apparatus for hardening a static random access memory cell from single event upsets |
摘要 |
A single event upset hardened memory cell to be utilized in static random access memories is disclosed. The single event upset hardened memory cell includes a first set of cross-coupled transistors, a second set of cross-coupled transistors, and a set of isolation transistors. The set of isolation transistors is coupled to the first set of cross-coupled transistors such that two inversion paths are formed between the cross-coupled transistors and the isolation transistors. |
申请公布号 |
AU1525300(A) |
申请公布日期 |
2000.12.18 |
申请号 |
AU20000015253 |
申请日期 |
1999.11.17 |
申请人 |
LOCKHEED MARTIN CORPORATION |
发明人 |
HO GIA PHAN;DERWIN JALLICE;BIN LI;JOSEPH HOFFMAN |
分类号 |
G11C11/412 |
主分类号 |
G11C11/412 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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