| 摘要 |
PROBLEM TO BE SOLVED: To improve the etching selection ratio by forming an antireflection film using only a hydrocarbon gas, to form an antireflection film which can be easily removed and can be formed into a thin film at a low cost, and to provide a method for its application. SOLUTION: This method includes a process of forming a high reflection film 104 on a semiconductor substrate 100 on which a base layer 102 is preliminarily formed, a process of forming an antireflection film 106 by using only a hydrocarbon gas on the high reflection film 104, a process of forming a photoresist pattern 108 on the antireflection film 106, a process of etching the antireflection film 106 and the high reflection film 104 in the lower part by using the photoresist pattern 108, and a process of removing at a time the photoresist pattern 108 and the antireflection film 106 from the resulting product. |
