| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacture in which evenness of an interlayer insulation film is improved and detailed work for an upper layer wiring is made easy to rationalize manufacturing process, in a semiconductor device containing a capacitor using a two-layer polysilicon. SOLUTION: Since all capacitor cells are placed on a groove part of a LO COS oxide film 9 on an N-type well region 6, the position of an upper electrode 18 can be made low, and as a result, an interlayer insulation film 19 is formed evenly. A level difference h1 of a board 1 is about 3,000 Å. The film thickness of a lower electrode 16 is about 2,500 Å, that of a capacity insulation film 17 is about 300 Å, and that of the upper electrode 18 is about 1,500 Å. So the height of a capacitor is about 4,300 Å. Then, by forming the groove part of 1,300 Å depth, the height of the top surface of the upper electrode 18 is made substantially equal to that of the top surface of the LOCOS oxide film 9 on a P-well region 8. |
