发明名称 POWER SEMICONDUCTOR MODULE
摘要 <p>PROBLEM TO BE SOLVED: To provide a power semiconductor module of satisfactory heat radiation characteristics by preventing cracks due to thermal fatigue caused by the difference in thermal deformations between an insulating member and a base plate, for reliable heat transfer. SOLUTION: Power semiconductor chips 106 and 108 are mounted on one surface via a first metal thin-plate 103, while the other surface comprises an insulating member 102 jointed to a base plate 101 with a joint member 105a via a second metal thin-plate 104. Here, at least four corners at the edge part of the second metal thin-plate 104 protrude beyond the edge part of the insulating member 102.</p>
申请公布号 JP2000349209(A) 申请公布日期 2000.12.15
申请号 JP19990161969 申请日期 1999.06.09
申请人 MITSUBISHI ELECTRIC CORP 发明人 KIKUNAGA TOSHIYUKI;KAMIGAI YASUMI;USUI OSAMU;MATSUMOTO HIDEO;HAYASHI KENICHI
分类号 H01L23/36;H01L25/07;H01L25/18;(IPC1-7):H01L23/36 主分类号 H01L23/36
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