INVERTED STAGGERED TFT AND MANUFACTURING METHOD FOR THE SAME

摘要

PURPOSE: A method for manufacturing a bottom type thin film transistor is provided to make the thickness of gate oxide constant by forming the gate oxide using a sacrifice nitride film. CONSTITUTION: The method for manufacturing a bottom type thin film transistor provides a substrate(1) in which a gate(2) is formed. A sacrifice oxide film of a given thickness is formed on the entire surface of the substrate. A portion of the sacrifice oxide film is etched so that the thickness of a portion that will become a drain off region can be left to be relatively thick. A channel layer(4) is formed on the sacrifice oxide film. The sacrifice oxide film is removed. Oxide films(5,6) are formed on the surface of the channel layer, and the surface of the substrate and the gate. Oxide is filled between the oxide films to form a gate oxide at a spacer from which the sacrifice oxide film is removed.