MANUFACTURING METHOD OF SINGLE CRYSTAL SOI WAFER

摘要

PURPOSE: A method for manufacturing a single crystal SOI wafer is provided to form a defectless SOI wafer by removing a dopant region of a wafer. CONSTITUTION: A dopant region is formed on the first silicon wafer by implanting dopant ions therein. Silicon ions are implanted into the dopant region. An epitaxial layer(30) is grown on the dopant region by using SiCl4 and hydrogen gas. The first and the second oxide layers are formed on the epitaxial layer(30) and the second silicon wafer(50), respectively. A single oxide layer is formed by adhering the first oxide layer of the first silicon wafer to the second oxide layer of the second silicon wafer(50). The dopant region is removed.