| 摘要 |
PURPOSE: A manufacturing method of type polysilicon TFT(Thin Film Transistor) is provided for offset type polysilicon TFT with adjusting the width of an offset region. CONSTITUTION: A polysilicon layer is doped on a substrate(100), and etched to make an active layer(1). The top of active layer(1) is oxidized, and a gate insulating layer(3) is built. A polysilicon is stacked on the gate insulation layer(3), and etched to produce a gate(5). After vaporizing and etching a silicide forming metal, the metal layer is removed except around the gate region. The thickness of metal layer is decided with considering the width of an offset. By inserting a high density of dopant ion into both side of active layer(1), a source(13) region and a drain(15) region are formed. Through annealing process, silicide(10) is constructed, and the width of the offset is adjusted depending on the silicide(10) forming condition. Low density of dopant ion is inserted, and the offset region is formed from the source(13) and the drain(15) regions toward channel. The remaining metal layer, after making the silicide(10), is removed. A complex structure of gate is built on the polysilicon gate(5). Low density of dopant ion is injected to produce an offset region with the same thickness of removed metal layer. |
