| 摘要 |
PROBLEM TO BE SOLVED: To reduce the size of a chip by making first minimum distance between a channel widthwise direction end portion of a drain region of an MOS transistor and a contact region end portion larger than second minimum distance between a gate electrode side end portion in the channel lengthwise direction of the drain region and the contact region end portion. SOLUTION: First minimum distance 21 between a channel widthwise direction end portion of a drain region 10 and an end portion of a contact region 12 electrically connecting the drain region 10 and a metal electrode 14, is made larger than second minimum distance 22 between a gate electrode 11 side end portion in the channel lengthwise direction of the drain region 10 and the end portion of the contact region 12 electrically connecting the drain region 10 and the metal electrode 14. Localization of eddy current which is generated when electrostatic noise is applied to the drain region 10 is relieved, and breakdown of a transistor which is to be generated by local heat generation is restrained. As a result, electrostatic durability of a transistor for an I/O circuit can be increased, and reduction effect of manufacturing cost due to reduction of chip size is obtained.
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