发明名称 |
VERTICAL TYPE CHEMICAL VAPOR DEPOSITOR |
摘要 |
PURPOSE: A semiconductor CVD system is provided to prevent the formation of an oxide layer prior to a deposition process by intercepting flow of external air to an inside of a tube. CONSTITUTION: A shutter(12) is installed at a lower opening portion of a tube(11). A boat(14) for loading a wafer(13) is installed at a lower portion of the shutter(12). An air interception portion(20) is installed at an outside of the shutter(12). The air interception portion(20) intercepts flow of air to an inside of the tube(11) when loading the boat(14). The air interception portion has a nitrogen injection portion(21) for injecting a nitrogen gas and forming a nitrogen curtain and a nitrogen absorption portion(22) for absorbing the injected nitrogen gas.
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申请公布号 |
KR100273222(B1) |
申请公布日期 |
2000.12.15 |
申请号 |
KR19970039666 |
申请日期 |
1997.08.20 |
申请人 |
HYUNDAI MICRO ELECTRONICS CO., LTD. |
发明人 |
SEO, DONG-SUK |
分类号 |
H01L21/205;(IPC1-7):H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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