FERROELECTRIC MEMORY DEVICE

摘要

PURPOSE: A ferroelectric memory device is provided to reduce the amount of charges of reference cells and extend the life by alternately storing 0 and 1 into the two reference cells depending on variations in an address signal used to select word lines of a memory cell array. CONSTITUTION: A ferroelectric memory device includes a cell array having a plurality of memory cells between a plurality of word lines and bit lines. A decoder selects the word lines depending on a plurality of address inputs. A logic circuit generates a logic signal depending on two least significant bits of the address. A reference voltage generating circuit(21) has two reference cells(C3,C4) that are alternately programmed by the logic signal. A sense amplifier senses data stored in the memory cell selected by the decoder by means of the output of the reference voltage generating circuit(21).