| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory cell which does not require a capacitor of large capacity that a conventional DRAM needs can be elongated enough in a data holding time. SOLUTION: A semiconductor memory cell is composed of a first conductivity-type read-only first transistor TR1 equipped with a source/drain region, a channel forming region CH1, and a gate region G1, a second conductivity-type switching second transistor TR2 equipped with a source/drain region, a channel forming region CH2, and a gate region G2, a junction-type transistor JF1, and an auxiliary capacitor C. One of the source/drain regions of the first transistor TR1 is corresponding to the channel forming region CH2 of the second transistor TR2 and also corresponding to one of the source/drain regions of the junction-type transistor JF1, one of the source/drain regions of the second conductivity-type switching second transistor TR2 is corresponding to the channel forming region CH1 of the first transistor TR1 and also corresponding to the gate of the junction-type transistor JF1, and the auxiliary capacitor C is connected to the channel forming region CH1 of the first transistor TR1. |
