METHOD OF FABRICATION OXIDE FILM OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A forming method of gate oxide layer in semiconductor device is provided to increase reliability by making a high quality of gate oxide layer. CONSTITUTION: An HTO(Hot Temperature Oxide), as the first gate oxide layer, is made on the condition of 750-850 deg.C and 0.5 Torr using reaction gas such as SiH4 and N2O in an LPCVD(Low Pressure Chemical Vapor Deposition) reaction tube. On the first gate oxide layer, a hydro-oxide layer is formed as the second gate oxide layer in a pyrogenic system using quartz reaction tube. Comparing the HTO+hydro-oxide layer with a pyro-oxide layer, the HTO+hydro-oxide layer has better specific characters such as T.D.D.B(Time Dependence Dielectric Breakdown Voltage) character, breakdown voltage and current character, and SIMS(Secondary Ion Mass Spectroscopy) analysis.