METHOD FOR MANUFACTURING A GATE STRUCTURE OF A SEMICONDUCTOR DEVICE USING A LIQUID PHASE DEPOSITION

摘要

PURPOSE: A method for manufacturing a gate structure of a semiconductor device using a liquid phase deposition is provided to form a cobalt silicide pattern, by using a silicon oxidation layer in a selective liquid phase deposition without using a selective dry etching process. CONSTITUTION: A silicon layer is formed on a semiconductor substrate(100). A photoresist layer pattern is formed on the silicon layer. The silicon layer is patterned to form a silicon pattern by using the photoresist layer pattern as an etch mask. A silicon oxidation layer(400) exposing an upper surface of the photoresist layer pattern is selectively formed in a liquid phase deposition by using a selective characteristic with the photoresist layer pattern on a semiconductor substrate exposed by the silicon pattern(250). The photoresist layer pattern is eliminated. A cobalt silicide pattern filling a gap(450) between the silicon oxidation layers is formed on the silicon pattern exposed by eliminating the photoresist layer pattern. The silicon oxidation layer is eliminated.