发明名称 LAYERED CRYSTAL STRUCTURE OXIDES
摘要 PURPOSE: Layered crystal structure oxide is provided to be capable of obtaining ferroelectric and para-electric characteristics. CONSTITUTION: Layered crystal structure oxide is made of the first element containing at least one selected from the first group consisting of Bi, Na, K, Ca, Ba, Sr, and Pb, the second element containing at least one selected from the second group consisting of Fe, Ti, V, Nb, Ta, W, and Cu, and oxygen. At this time, the layered crystal structure oxide includes a fluorite layer(11) and a perovskite layer(12). The negative and positive ions of the fluorite layer are relatively displaced to the polarization axis direction as much as more than 3 % of a unit lattice length. Preferably, the negative and positive ions are capable of being relatively displaced to the polarization axis direction as much as more than 5-7 % of the unit lattice length.
申请公布号 KR100276203(B1) 申请公布日期 2000.12.15
申请号 KR20000028537 申请日期 2000.05.26
申请人 SONY CORPORATION 发明人 NAGASAWA, NAOMI;MACHIDA, AKIO;AMI, TAKAAKI;SUZUKI, MASAYUKI
分类号 C30B29/22;(IPC1-7):C30B29/22 主分类号 C30B29/22
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