发明名称 |
METHOD FOR FORMING A MINUTE ISOLATED HOLE PATTERN |
摘要 |
PURPOSE: A method for forming a single fine hole pattern is provided to form a single fine hole pattern with a high resolution and a high depth of focus by performing a photo-lithography process. CONSTITUTION: The first photoresist(12) is applied on a lower layer. The first exposure process for the first photoresist(12) is performed by using the first reticle forming an auxiliary fine pattern hole around a single fine hole pattern. A thermal process for the first photoresist(12) is performed. The first photoresist(12) is hardened. The second photoresist(22) is applied on the lower layer including the first photoresist(12). A single fin hole pattern(25) is formed by performing the exposure process for the second photoresist(22) using the second reticle.
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申请公布号 |
KR100275146(B1) |
申请公布日期 |
2000.12.15 |
申请号 |
KR19980006740 |
申请日期 |
1998.03.02 |
申请人 |
ANAM SEMICONDUCTOR., LTD. |
发明人 |
RHYU, DAL LAE |
分类号 |
H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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