发明名称 METHOD FOR FORMING A MINUTE ISOLATED HOLE PATTERN
摘要 PURPOSE: A method for forming a single fine hole pattern is provided to form a single fine hole pattern with a high resolution and a high depth of focus by performing a photo-lithography process. CONSTITUTION: The first photoresist(12) is applied on a lower layer. The first exposure process for the first photoresist(12) is performed by using the first reticle forming an auxiliary fine pattern hole around a single fine hole pattern. A thermal process for the first photoresist(12) is performed. The first photoresist(12) is hardened. The second photoresist(22) is applied on the lower layer including the first photoresist(12). A single fin hole pattern(25) is formed by performing the exposure process for the second photoresist(22) using the second reticle.
申请公布号 KR100275146(B1) 申请公布日期 2000.12.15
申请号 KR19980006740 申请日期 1998.03.02
申请人 ANAM SEMICONDUCTOR., LTD. 发明人 RHYU, DAL LAE
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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