发明名称 |
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to simplify manufacturing process, by consecutively forming polymer on a sidewall of a photoresist layer pattern and etching a lower layer under the photoresist layer pattern used as a mask, in the same process chamber. CONSTITUTION: A conductive layer is formed on a semiconductor substrate(11) having a lower structure. An anti-reflecting layer(18) and a photoresist pattern(19) are sequentially formed on the conductive layer. Polymer(20) is formed on a sidewall of the photoresist layer pattern. An in-situ process is performed in the same process chamber to form a pattern by etching the anti-reflecting layer and conductive layer with polymer using as a mask the polymer formed on the photoresist layer pattern and on the sidewall of the photoresist layer pattern.
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申请公布号 |
KR20000074199(A) |
申请公布日期 |
2000.12.15 |
申请号 |
KR19990017955 |
申请日期 |
1999.05.19 |
申请人 |
HYUNDAI ELECTRONICS IND. CO.,LTD |
发明人 |
KANG, HYO SANG;LEE, DONG YEOL;JUNG, JONG HO;CHOI, BYEONG GON;CHOI, AN HO |
分类号 |
H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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