发明名称 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
摘要 PURPOSE: A method for manufacturing a semiconductor device is provided to simplify manufacturing process, by consecutively forming polymer on a sidewall of a photoresist layer pattern and etching a lower layer under the photoresist layer pattern used as a mask, in the same process chamber. CONSTITUTION: A conductive layer is formed on a semiconductor substrate(11) having a lower structure. An anti-reflecting layer(18) and a photoresist pattern(19) are sequentially formed on the conductive layer. Polymer(20) is formed on a sidewall of the photoresist layer pattern. An in-situ process is performed in the same process chamber to form a pattern by etching the anti-reflecting layer and conductive layer with polymer using as a mask the polymer formed on the photoresist layer pattern and on the sidewall of the photoresist layer pattern.
申请公布号 KR20000074199(A) 申请公布日期 2000.12.15
申请号 KR19990017955 申请日期 1999.05.19
申请人 HYUNDAI ELECTRONICS IND. CO.,LTD 发明人 KANG, HYO SANG;LEE, DONG YEOL;JUNG, JONG HO;CHOI, BYEONG GON;CHOI, AN HO
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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