METHOD FOR ETCHING A METAL LAYER AND A METHOD FOR MANUFACTURING A THIN FILM TRANSISTOR USING THE SAME

摘要

PURPOSE: A method for manufacturing a thin film transistor(TFT) using a method for etching a metal layer is provided to decrease the number of photo processes by simultaneously etching a stacked metal layer of more than two layers, and to simplify the overall process by removing the process to eliminate an overhang. CONSTITUTION: An active layer having source/drain regions is formed on an insulating substrate(300). The first and second metal layers(302,306) are consecutively formed on the active layer by interposing an insulating layer. A plasma process is performed regarding a part of the second metal layer or the entire surface of the second metal layer. A part of the plasma-processed first and second metal layers is eliminated until the insulating substrate is exposed, to form a barrier layer and a gate electrode. Source/drain electrodes connected to the source/drain regions are formed on the insulating substrate.