| 摘要 |
The platinum resistance sensing element is formed on a silicon substrate using materials and manufacturing processes typically used in the semiconductor industry. The method comprises (a) forming a mask on the surface of the substrate (31) preferably of silicon, the pattern being identical to the negative of the platinum circuit, (b) etching the substrate through the opening of the mask to form a groove pattern (34), (c) removing the mask from the substrate, (d) forming a dielectric layer (35) on the surface of the etched substrate and the groove, the dielectric layer being divided into a concave portion located on the groove and a smooth portion located on the surface of the substrate, (e) depositing a layer of platinum film (36) on the dielectric layer, the platinum film being divided into a first portion located on the concave portion within the groove and a second portion located on the smooth portion on substrate surface, and (f) polishing the substrate such that the first platinum layer remains attached to the concave portion forming the circuit of the sensing element. |
