SEMICONDUCTOR LASER

摘要

A semiconductor laser has a laminated structure of semiconductor material that includes an active layer having a quantum well structure. The laminated structure has high-reflectivity film on one end and low-reflectivity film on the other end. The laser has a resonator length (L) of longer than 1200 mu m, large kink current, and a current-optical output characteristic with desired linearity. The laser is useful as a light source for excitation of an optical fiber amplifier.