| 摘要 |
<p>A long-wavelength light-emitting device in which an active multilayer constituted of a quantum-well layer and a barrier layer is provided between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, the quantum-well layer is made of InxGa1-xN (where 0∫x∫1), and the emission peak wavelength lies in a range of 450-540 nm is characterized in that the number of layers of the active multilayer ranges from 9 to 13, and three or less of the first layer from the n-type nitride semiconductor layer and in contact with it to the third layer contain n-type impurity selected from the group consisting of Si, Ge, and Sn at a concentration of 5x10?16-2x1018/cm3¿, thereby decreasing the drive voltage of the light-emitting device having a quantum-well structure, and improving the luminous output.</p> |
