| 摘要 |
PURPOSE: A method for manufacturing an isolation region of a semiconductor device is provided to improve an isolating effect and reduce a leakage current, by burying a conductive layer in the isolation region, and by applying voltage to the conductive layer to extend a depletion layer. CONSTITUTION: After a buffer oxidation layer and a nitride layer are sequentially evaporated on a semiconductor substrate(11), a part of the buffer oxidation layer and nitride layer is etched to expose the semiconductor substrate. After the exposed semiconductor substrate is etched to form a trench, the first oxidation layer is formed on an inner wall of the trench. After a conductive layer(16) is formed in the trench having the first oxidation layer, an insulating layer(18) is formed on the conductive layer and planarized to fill the trench. The nitride layer and the buffer oxidation layer are eliminated.
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