| 摘要 |
PROBLEM TO BE SOLVED: To provide an ultrafine photoresist pattern forming method applicable to the production of a 4G DRAM or 16G DRAM semiconductor device using a chemical amplification type photoresist composition containing a crosslinking agent by using a crosslinking monomer selected from the group comprising specified compounds as the crosslinking agent. SOLUTION: The photoresist composition containing a crosslinking monomer selected from the group comprising compounds of formulae I and II as a crosslinking agent is used. In the formulae, R1, R2, R5, R6 and R are mutually the same or different and each selected from the group comprising 1-10C principal chain or side chain substituted alkyl, 1-10C principal chain or side chain substituted ester, 1-10C principal chain or side chain substituted ketone, etc., and 1-10C principal chain or side chain substituted acetal containing one or more hydroxy groups, R3 and R7 are each H or methyl, (m) is 0 or 1 and (n) is an integer of 2-10. |
