发明名称 |
Semi-insulating silicon carbide without vanadium domination |
摘要 |
A semi-insulating bulk single crystal of silicon carbide is disclosed that has a resistivity of at least 5000 OMEGA-cm at room temperature and a concentration of deep level trapping elements that is below the amounts that will affect the resistivity of the crystal, preferably below detectable levels. A method of forming the crystal is also disclosed, along with some resulting devices that take advantage of the microwave frequency capabilities of devices formed using substrates according to the invention. |
申请公布号 |
AU7050600(A) |
申请公布日期 |
2000.12.12 |
申请号 |
AU20000070506 |
申请日期 |
2000.05.17 |
申请人 |
CREE, INC. |
发明人 |
CALVIN H. CARTER JR.;MARK BRADY;VALERI F. TSVETKOV |
分类号 |
C30B29/36;C30B23/00;C30B33/00;H01L21/338;H01L29/161;H01L29/778;H01L29/812 |
主分类号 |
C30B29/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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