| 摘要 |
PROBLEM TO BE SOLVED: To provide a device capable of forming silicon thin films, other semiconductor thin films and dielectric thin films high in the orientation properties of crystal axes on large insulating substrates such as glass substrates for TFT, or the like, while etching and chemical vapor deposition(CVD) are repeated. SOLUTION: This is a remote plasma CVD device capable of repeating etching and film formation in such a manner that the plasma generating position repeats the approach and separation to a substrate. The main part is composed of a high density plasma generating part 1, a film forming gaseous starting material feeding part 6, an exhaust port 7 adjacent thereto and a substrate supporting stand 9. |
