Method for etching layers on a semiconductor wafer in a single etching chamber

摘要

Polysilicon and oxide layers on a semiconductor wafer are etched in a single etching chamber configured for selectively providing a first etching environment in the chamber for etching of the polysilicon layer, and a second etching environment in the chamber for etching the oxide layer. The decoupled plasma source polysilicon etch chamber enables etching of both oxide-based layers and silicon-based layers, without removing the semiconductor wafer from the etching chamber.