发明名称 VOLTAGE DETECTING CIRCUIT AND VOLTAGE BOOSTING CIRCUIT FOR SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent sharp changes in booster voltage by providing a detector for a voltage boosting circuit with a compensating current which supplies a section, including an option element. SOLUTION: For preventing the potential of a signal line VPP from increasing, a second detector 104 is provided with a compensating current supplying section 141. The section 141 is coupled between the drain of a PMOS transistor 239 and a node 256, whereby the potential at the node 256 is compensated for via the section 141. Therefore, the potential gradient of the line VPP is controlled, in such a way that it exhibits a mild ramp as an internal power source voltage VCC increases, thereby eliminating the possibility of the potential of the line VPP rising sharply. As a result, the lifetime and reliability of a semiconductor device having the voltage boosting circuit are prevented from reducing, as well as its yield.
申请公布号 JP2000340756(A) 申请公布日期 2000.12.08
申请号 JP20000126391 申请日期 2000.04.26
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 JEON BAEK-YEONG
分类号 H01L27/04;G05F1/10;G05F3/24;G11C5/14;G11C11/407;H01L21/822;H03K5/08;(IPC1-7):H01L27/04 主分类号 H01L27/04
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