| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacture of a film for shielding a light with high shielding property for a light in the manufacture of an electric optical device which is provided with a film for shielding light on a TFT alley substrate. SOLUTION: An electric optical device is equipped with a TFT alley substrate 40 which has a channel region 1a' consisting of a semiconductor film on a quartz substrate 10, a film for shielding a light 11a which is arranged corresponding to it. The film for shielding a light 11a comprises WSi (tungsten silicide), by performing the heat treatment in a specified temperature range in a condition which forms a non-dope silicate glass 12 so as to covers the film 11a, the light shielding property of the film 11a can be enhanced and the characteristic deterioration of a thin film transistor by the light of the return light or the like which comes incident on the channel region of the thin film transistor, can be prevented. |
