| 摘要 |
PROBLEM TO BE SOLVED: To provide films formed on wafers which can suppress small variations in grain size caused by temperature difference. SOLUTION: A sputtering device is composed of a sputtering mechanism 10 and a control mechanism 20, where the sputtering mechanism 10 is provided with a grain check chamber 16, which measures the grain size of a film formed on a wafer. The control mechanism 20 is equipped with a monitoring result analyzing section 24, which analyzes the measurement result of grain size, a deciding section 25 which deciding whether the grain size of a film is within specification limits, a center value or out of a center value but within a controllable limit or out of a controllable limit based on an analysis result, a correction condition calculation section 26 which calculates the most suitable sputtering conditions where a set value can be obtained, when the grain size is out of a center value but is within the controllable limit, a condition setting section 27, an output section 28, basic data 31 for setting initial conditions, control data 32 for setting correction conditions, and a control section 29 which controls the processings of all the sections.
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