| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film capacitor having a low inductance structure whose mounting and integration can be simplified. SOLUTION: In this thin film capacitor, capacitor elements A, B, and C constituted by forming a first electrode layer 2 on the lower face of a dielectric layer 1 and a second electrode layer 3 on the upper face of the dielectric layer 1 are arranged in parallel with prescribed intervals, and plural first terminal electrode layers 4 for connecting the first electrode layers 2 and plural second terminal electrode layers 5 for connecting the second electrode layers 3 are alternately arranged with prescribed intervals between each capacity element A, B, and C. Then, the first terminal electrode layer 4 arranged at one side of the capacity elements A, B, and C and the second terminal electrode layer 5 arranged at the other side are arranged so as to be faced to each other, and outside terminals 7 are arranged on the first terminal electrode layer 4 and the second terminal electrode layer 5.
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