SEMICONDUCTOR DEVICE, MANUFACTURE THEREOF, AND FIELD- EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To increase electrical signal transmission speed by forming an electrode layer on a semiconductor substrate, and providing the electrode layer with a semiconductor layer, into which a boron-containing hydrogen compound is implanted. SOLUTION: A pMOS region 101 and an nMOS region 102 are formed on the surface of a silicon substrate 1, and a p-type field-effect transistor 111 is formed in the region 101. The transistor 111 comprises p-type impurity regions 10 as a pair of source/drain regions formed on the surface of the substrate 1, and a gate electrode 8 formed on the substrate 1 with gate oxide film 7 interposed therebetween. The electrode 8 is provided with a semiconductor layer, into which a boroncontaining hydrogen compound is implanted. As a result, transmission speed of electrical signal can be increased, and hence production efficiency can be improved.