| 摘要 |
PROBLEM TO BE SOLVED: To simplify a method for manufacturing a semiconductor device, wherein at least a lightly doped drain type insulation gate type FET and a bipolar transistor are formed on a common semiconductor base, and to increase the reliability of the manufacturing process. SOLUTION: An insulation layer for forming a sidewall of a lightly-doped drain type insulation gate type FET is formed by two insulation films, that is, a first insulation film 21 and a second insulation film 22. In the first insulation film 21 which is in a lower layer, an opening is formed, through which a crystalline semiconductor layer can be formed to simplify the manufacturing process and increase the reliability of the process.
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