| 摘要 |
PROBLEM TO BE SOLVED: To improve the breakdown voltage of a semiconductor device having its device main device operational region formed in a trapezoidal part. SOLUTION: The main operational region of a high electron mobility transistor(HEMT) is formed in a trapezoidal part 12. Source and drain small strip portions 2a and 3a in the trapezoidal part 12 are provided with circular tip ends 2d and 3d, which are extended to the outside of the trapezoidal part 12. One ends 2e and 3e of the small strip portions 2a and 3a are formed tapered.
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