发明名称 POSITIVE PHOTORESIST COMPOSITION FOR EXPOSURE WITH FAR ULTRAVIOLET RAY
摘要 PROBLEM TO BE SOLVED: To ensure superior sensitivity, resolving power, dry etching resistance and adhesion to a substrate and to prevent the occurrence of development defects and edge roughness in development by incorporating a specified acid decomposable resin and a specified additive. SOLUTION: This positive photoresist composition contains a compound which generates an acid when irradiated with active light or radiation, a resin which has repeating units of the formula, is decomposed by the action of the acid and increases its alkali solubility and a solvent containing 60-90 wt.% 1st solvent such as ethyl lactate or propylene glycol monomethyl ether acetate based on the amount of the entire solvent and 10-40 wt.% 2nd solvent having <=1 cP viscosity at 20 deg.C based on the amount of the entire solvent. In the formula, R1 is H, a halogen or a 1-4C linear or a branched alkyl and R2-R4 are each H or hydroxy but at least one of R2-R4 is hydroxy.
申请公布号 JP2000338681(A) 申请公布日期 2000.12.08
申请号 JP19990152862 申请日期 1999.05.31
申请人 FUJI PHOTO FILM CO LTD 发明人 SATO KENICHIRO;NAKAO HAJIME;AOSO TOSHIAKI
分类号 H01L21/027;G03F7/004;G03F7/039 主分类号 H01L21/027
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