| 摘要 |
PROBLEM TO BE SOLVED: To prevent an element break due to a recovery current when inversely recovering, and decrease a forward voltage by enlarging the area of an anode contact, by a method wherein a trench having an insulator inside is formed in a second conductivity semiconductor region under a connection part between an electrode and an insulation layer. SOLUTION: A connection plane between an anode region 3 and an anode electrode 7 is set as an anode contact region 8, a connection part between an insulation layer 5 in a lower part of the anode electrode 7 and the anode region 3 is set as a contact margin 9, and a trench insulated groove 11 having a substantially equal depth to a layer thickness 10 of an anode region is formed inside the anode region in the lower part. An insulator composed of SiN is formed inside the trench insulated groove 11. This trench insulated groove 11 causes to increase a moving distance of a hole current component from an outer peripheral N-region 14 to an anode contact terminal part 15 more than the layer thickness 10 of the anode region, thereby preventing a current gathering on the anode contact terminal part 15.
|
