发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To enable reduction of dishings and erosion in a step of polishing a wiring layer other than a wiring layer embedded in a groove for the wiring layer made in an insulation film or the like by a chemical and mechanical polishing(CMP) method. SOLUTION: Prior to the step of making grooves 14 for a wiring layer in an insulating film 9, a step is provided of forming projected steps 12 of a non- photosensitive material in the vicinity of the grooves 14. For example, a step is provided for removing a barrier metal film 15 and a wiring metal layer 16 on the insulating film 9, to form a damascene wiring layer made of the barrier metal film 15 embedded in the grooves 14 and the metal layer 16.
申请公布号 JP2000340566(A) 申请公布日期 2000.12.08
申请号 JP19990149063 申请日期 1999.05.28
申请人 HITACHI LTD 发明人 YAMADA YOHEI;FUKADA SHINICHI
分类号 H01L21/3205;H01L21/768;(IPC1-7):H01L21/320 主分类号 H01L21/3205
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