| 摘要 |
PROBLEM TO BE SOLVED: To protect a wiring layer against the occurrence of electromigration. SOLUTION: An insulating layer 12 is formed on a semiconductor substrate 11, and a groove 12a used for forming a wiring layer 15 is provided in the prescribed region of the insulating layer 12. A barrier metal 13 is formed on the inner wall of the groove 12a to prevent atoms constituting in the wiring layer 15 from being diffused into the insulating layer 12. A seed layer 14 is formed on the barrier metal layer 13 deposited on the base of the groove 12a to serve as nucleuses for growing crystals, when the wiring layer 15 is formed. The crystal of the seed layer 14 is oriented predominantly in the (111) orientation. The wiring layer 15 is formed so as to fill in the groove 12a. The crystal of the wiring layer 15 is predominantly oriented in a (111) orientation, in which electromigration hardly occurs. |
