| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with a multilayer gate electrode, which has a low-resistance film with low oxidation resistance on a polysilicon film, and a self-aligned contact. SOLUTION: A gate electrode 21 consists of a lower electrode 21a, made of a polysilicon film and an upper electrode 21b containing a low-resistance film. A first nitride sidewall 32 is formed at least on the sides of the upper electrode 21 and an insulator cap 31, and a protective oxide film 34 is formed at least on a portion of the lower electrode 21a and the top surface of a semiconductor device. Since the first nitride sidewall 32 and a second nitride sidewall 33 which covers the protective oxide film 34 are formed, a self-aligned contact hole can be formed, when etching is conducted. As a result, a semiconductor device having a highly reliable self-aligned contact can be obtained.
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