发明名称 METHOD FOR CORRECTING PROXIMITY EFFECT IN ELECTRON BEAM LITHOGRAPHY
摘要 PROBLEM TO BE SOLVED: To perform smooth pattern stitching without dividing a pattern finely even if a correction value is greatly changed. SOLUTION: A proximity effect correction unit 24 obtains an inclination amount in X and Y directions of a corrected value from the proximity effect corrected amount of a square itself to be shot and an area therearound, and prepare a signal to control the changing amount of a square size on the basis of the inclination amount. The signal to control the size in X and Y directions is aupplied to a molding deflector control circuit 16. The circuit 16 sets the size in Y direction to a specified value in the first shot stage, and controls the size in X direction so that it may change continuously from zero. Then, in the later stage, the circuit 16 sets the size in X direction to a specified value, and controls the size in Y direction so that it may become smaller continuously. Because of such a controlling operation, the proximity effect can be corrected in a high accuracy even if the correction amount is greatly changed.
申请公布号 JP2000340481(A) 申请公布日期 2000.12.08
申请号 JP19990146189 申请日期 1999.05.26
申请人 JEOL LTD 发明人 WAKIMOTO OSAMU
分类号 H01L21/027;G03F7/20;(IPC1-7):H01L21/027 主分类号 H01L21/027
代理机构 代理人
主权项
地址